MDB10SS

Fairchild Semiconductor MDB10SS

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • MDB10SS
  • Fairchild Semiconductor
  • BRIDGE RECTIFIER DIODE
  • Diodes - Bridge Rectifiers
  • MDB10SS Лист данных
  • 4-SMD, Gull Wing
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MDB10SSLead free / RoHS Compliant
  • 2812
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MDB10SS
Category
Diodes - Bridge Rectifiers
Manufacturer
Fairchild Semiconductor
Description
BRIDGE RECTIFIER DIODE
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Supplier Device Package
4-MicroDIP/SMD
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
1 kV
Current - Average Rectified (Io)
1 A
Voltage - Forward (Vf) (Max) @ If
1 V @ 1 A
Current - Reverse Leakage @ Vr
10 µA @ 1 V
Package_case
4-SMD, Gull Wing

MDB10SS Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/MDB10SS

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/MDB10SS

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/MDB10SS

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о MDB10SS ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Fairchild Semiconductor
Fairchild Semiconductor,https://www.jinftry.ru/product_detail/MDB10SS
IRFNL210BTA,https://www.jinftry.ru/product_detail/MDB10SS
IRFNL210BTA

200V N-CHANNEL MOSFET

FDMC0225,https://www.jinftry.ru/product_detail/MDB10SS
FDMC0225

200V N-CHANNEL MOSFET

FDMC0228,https://www.jinftry.ru/product_detail/MDB10SS
FDMC0228

200V N-CHANNEL MOSFET

FDMC0222,https://www.jinftry.ru/product_detail/MDB10SS
FDMC0222

200V N-CHANNEL MOSFET

FDMS7696A,https://www.jinftry.ru/product_detail/MDB10SS
FDMS7696A

200V N-CHANNEL MOSFET

IRFN214BTA,https://www.jinftry.ru/product_detail/MDB10SS
IRFN214BTA

200V N-CHANNEL MOSFET

SMC6280P,https://www.jinftry.ru/product_detail/MDB10SS
SMC6280P

200V N-CHANNEL MOSFET

FDMC0205,https://www.jinftry.ru/product_detail/MDB10SS
FDMC0205

200V N-CHANNEL MOSFET

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP