GeneSiC Semiconductor MBRT20060
- MBRT20060
- GeneSiC Semiconductor
- DIODE MODULE 60V 200A 3TOWER
- Diodes - Rectifiers - Arrays
- MBRT20060 Лист данных
- Three Tower
- Bulk
- Lead free / RoHS Compliant
- 4639
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MBRT20060 |
Category Diodes - Rectifiers - Arrays |
Manufacturer GeneSiC Semiconductor |
Description DIODE MODULE 60V 200A 3TOWER |
Package Bulk |
Series - |
Mounting Type Chassis Mount |
Package / Case Three Tower |
Supplier Device Package Three Tower |
Diode Type Schottky |
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 A |
Current - Reverse Leakage @ Vr 1 mA @ 20 V |
Diode Configuration 1 Pair Common Cathode |
Voltage - DC Reverse (Vr) (Max) 60 V |
Current - Average Rectified (Io) (per Diode) 200A (DC) |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction - |
Package_case Three Tower |
MBRT20060 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MBRT20060 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
GeneSiC Semiconductor
MBRT20045
DIODE MODULE 45V 200A 3TOWER
MBRT20035
DIODE MODULE 45V 200A 3TOWER
MBRT20040R
DIODE MODULE 45V 200A 3TOWER
MBRT20035R
DIODE MODULE 45V 200A 3TOWER
MUR30040CTR
DIODE MODULE 45V 200A 3TOWER
MUR30040CT
DIODE MODULE 45V 200A 3TOWER
MUR30020CTR
DIODE MODULE 45V 200A 3TOWER
MUR30010CTR
DIODE MODULE 45V 200A 3TOWER
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.