GeneSiC Semiconductor MBRT12030
- MBRT12030
- GeneSiC Semiconductor
- DIODE MODULE 30V 120A 3TOWER
- Diodes - Rectifiers - Arrays
- MBRT12030 Лист данных
- Three Tower
- Bulk
- Lead free / RoHS Compliant
- 1459
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MBRT12030 |
Category Diodes - Rectifiers - Arrays |
Manufacturer GeneSiC Semiconductor |
Description DIODE MODULE 30V 120A 3TOWER |
Package Bulk |
Series - |
Mounting Type Chassis Mount |
Package / Case Three Tower |
Supplier Device Package Three Tower |
Diode Type Schottky |
Voltage - Forward (Vf) (Max) @ If 750 mV @ 60 A |
Current - Reverse Leakage @ Vr 1 mA @ 20 V |
Diode Configuration 1 Pair Common Cathode |
Voltage - DC Reverse (Vr) (Max) 30 V |
Current - Average Rectified (Io) (per Diode) 120A (DC) |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction - |
Package_case Three Tower |
MBRT12030 Гарантии
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Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
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