Vishay Semiconductor - Diodes Division MBRB745HE3_A/P
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- MBRB745HE3_A/P
- Vishay Semiconductor - Diodes Division
- DIODE SCHOTTKY 45V 7.5A TO263AB
- Diodes - Rectifiers - Single
- MBRB745HE3_A/P Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
Lead free / RoHS Compliant - 16847
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number MBRB745HE3_A/P |
| Category Diodes - Rectifiers - Single |
| Manufacturer Vishay Semiconductor - Diodes Division |
| Description DIODE SCHOTTKY 45V 7.5A TO263AB |
| Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Series Automotive, AEC-Q101 |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263AB |
| Diode Type Schottky |
| Current - Average Rectified (Io) 7.5A |
| Voltage - Forward (Vf) (Max) @ If 840mV @ 15A |
| Current - Reverse Leakage @ Vr 100µA @ 45V |
| Voltage - DC Reverse (Vr) (Max) 45V |
| Speed Fast Recovery =< 500ns, > 200mA (Io) |
| Operating Temperature - Junction -65°C ~ 150°C |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MBRB745HE3_A/P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MBRB745HE3_A/P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
MBRB745HE3_A/P сопутствующие товары
Комментарии
Vishay Semiconductor - Diodes Division
AS4PMHM3_A/I
DIODE AVALANCH 1KV 2.4A TO277A
AS4PKHM3_A/I
DIODE AVALANCH 1KV 2.4A TO277A
AS4PJHM3_A/I
DIODE AVALANCH 1KV 2.4A TO277A
AS4PGHM3_A/I
DIODE AVALANCH 1KV 2.4A TO277A
AS4PDHM3_A/I
DIODE AVALANCH 1KV 2.4A TO277A
VI10150S-E3/4W
DIODE AVALANCH 1KV 2.4A TO277A
VS-MBRB745-M3
DIODE AVALANCH 1KV 2.4A TO277A
UH8JT-E3/45
DIODE AVALANCH 1KV 2.4A TO277A
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
