MBR360

DComponents MBR360

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • MBR360
  • DComponents
  • Schottky, 60V, 3A, 0.74V, 70A
  • Diodes - Rectifiers - Single
  • MBR360 Лист данных
  • DO-201AA, DO-27, Axial
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MBR360Lead free / RoHS Compliant
  • 1929
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MBR360
Category
Diodes - Rectifiers - Single
Manufacturer
DComponents
Description
Schottky, 60V, 3A, 0.74V, 70A
Package
Tape & Reel (TR)
Series
-
Mounting Type
Through Hole
Package / Case
DO-201AA, DO-27, Axial
Supplier Device Package
DO-201
Diode Type
Schottky
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
740 mV @ 3 A
Current - Reverse Leakage @ Vr
500 µA @ 60 V
Capacitance @ Vr, F
-
Voltage - DC Reverse (Vr) (Max)
60 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-50°C ~ 150°C
Package_case
DO-201AA, DO-27, Axial

MBR360 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/MBR360

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/MBR360

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/MBR360

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о MBR360 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

DComponents

MUR420,https://www.jinftry.ru/product_detail/MBR360
MUR420

SF Rect, 200V, 4.00A, 25ns

DB4,https://www.jinftry.ru/product_detail/MBR360
DB4

SF Rect, 200V, 4.00A, 25ns

BC557C,https://www.jinftry.ru/product_detail/MBR360
BC557C

SF Rect, 200V, 4.00A, 25ns

S125K,https://www.jinftry.ru/product_detail/MBR360
S125K

SF Rect, 200V, 4.00A, 25ns

S250K,https://www.jinftry.ru/product_detail/MBR360
S250K

SF Rect, 200V, 4.00A, 25ns

S125F,https://www.jinftry.ru/product_detail/MBR360
S125F

SF Rect, 200V, 4.00A, 25ns

MYS125,https://www.jinftry.ru/product_detail/MBR360
MYS125

SF Rect, 200V, 4.00A, 25ns

S380F,https://www.jinftry.ru/product_detail/MBR360
S380F

SF Rect, 200V, 4.00A, 25ns

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP