Micro Commercial Co MB4S-TP
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- MB4S-TP
- Micro Commercial Co
- BRIDGE RECT 1P 400V 500MA MBS-1
- Diodes - Bridge Rectifiers
- MB4S-TP Лист данных
- TO-269AA, 4-BESOP
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 2339
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number MB4S-TP |
| Category Diodes - Bridge Rectifiers |
| Manufacturer Micro Commercial Co |
| Description BRIDGE RECT 1P 400V 500MA MBS-1 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-269AA, 4-BESOP |
| Supplier Device Package MBS-1 |
| Technology Standard |
| Diode Type Single Phase |
| Voltage - Peak Reverse (Max) 400 V |
| Current - Average Rectified (Io) 500 mA |
| Voltage - Forward (Vf) (Max) @ If 1 V @ 400 mA |
| Current - Reverse Leakage @ Vr 5 µA @ 400 V |
| Package_case TO-269AA, 4-BESOP |
MB4S-TP Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MB4S-TP ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
MB4S-TP сопутствующие товары
Комментарии
Micro Commercial Co
GBJ2508-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
GBJL1010-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
GBU8J-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
GBU8D-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
GBU6M-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
UD4KB100-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
DB102-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
DB104-BP
BRIDGE RECT 1PHASE 800V 25A GBJ
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
