LQA32B300C

Power Integrations LQA32B300C

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • LQA32B300C
  • Power Integrations
  • DIODE GP 300V 16A TO220AB
  • Diodes - Rectifiers - Arrays
  • LQA32B300C Лист данных
  • -
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/LQA32B300CLead free / RoHS Compliant
  • 1154
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
LQA32B300C
Category
Diodes - Rectifiers - Arrays
Manufacturer
Power Integrations
Description
DIODE GP 300V 16A TO220AB
Package
Tape & Reel (TR)
Series
Qspeed™
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
1.9 V @ 16 A
Current - Reverse Leakage @ Vr
25 µA @ 300 V
Diode Configuration
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
300 V
Current - Average Rectified (Io) (per Diode)
16A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
13 ns
Operating Temperature - Junction
150°C (Max)
Package_case
-

LQA32B300C Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/LQA32B300C

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/LQA32B300C

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/LQA32B300C

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о LQA32B300C ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Power Integrations

LQA20T200C,https://www.jinftry.ru/product_detail/LQA32B300C
LQA20T200C

DIODE ARRAY GP 200V 10A TO220AB

LQA10T200C,https://www.jinftry.ru/product_detail/LQA32B300C
LQA10T200C

DIODE ARRAY GP 200V 10A TO220AB

LQA40B200C,https://www.jinftry.ru/product_detail/LQA32B300C
LQA40B200C

DIODE ARRAY GP 200V 10A TO220AB

LQA30B200C,https://www.jinftry.ru/product_detail/LQA32B300C
LQA30B200C

DIODE ARRAY GP 200V 10A TO220AB

LQA30T200C,https://www.jinftry.ru/product_detail/LQA32B300C
LQA30T200C

DIODE ARRAY GP 200V 10A TO220AB

LXA12T600C,https://www.jinftry.ru/product_detail/LQA32B300C
LXA12T600C

DIODE ARRAY GP 200V 10A TO220AB

LQA30T300,https://www.jinftry.ru/product_detail/LQA32B300C
LQA30T300

DIODE ARRAY GP 200V 10A TO220AB

LQA16T300,https://www.jinftry.ru/product_detail/LQA32B300C
LQA16T300

DIODE ARRAY GP 200V 10A TO220AB

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP