Microchip Technology JANTX2N3501L
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- JANTX2N3501L
- Microchip Technology
- TRANS NPN 150V 0.3A
- Transistors - Bipolar (BJT) - Single
- JANTX2N3501L Лист данных
- TO-205AA, TO-5-3 Metal Can
- Bulk
-
Lead free / RoHS Compliant - 4477
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number JANTX2N3501L |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer Microchip Technology |
| Description TRANS NPN 150V 0.3A |
| Package Bulk |
| Series Military, MIL-PRF-19500/366 |
| Operating Temperature -65°C ~ 200°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package TO-5 |
| Power - Max 1 W |
| Transistor Type NPN |
| Current - Collector (Ic) (Max) 300 mA |
| Voltage - Collector Emitter Breakdown (Max) 150 V |
| Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V |
| Frequency - Transition - |
| Package_case TO-205AA, TO-5-3 Metal Can |
JANTX2N3501L Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о JANTX2N3501L ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
JANTX2N3501L сопутствующие товары
Комментарии
Microchip Technology
JAN2N3420S
TRANS NPN 60V 3A
JAN2N3419S
TRANS NPN 60V 3A
JAN2N3418S
TRANS NPN 60V 3A
JAN2N5238S
TRANS NPN 60V 3A
JAN2N5238
TRANS NPN 60V 3A
JAN2N5237S
TRANS NPN 60V 3A
JAN2N5237
TRANS NPN 60V 3A
JAN2N3737UB
TRANS NPN 60V 3A
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Microchip PIC16F18054/55/75 Microcontrollers
Microchip PIC16F18054/55/75 Microcontrollers
Microchip PIC16F18054/55/74/75 Microcontrollers are small, feature-rich devices with powerful analog and digital peripherals. These microcontrollers feature 128-byte data Flash, 7KB/14KB program Flash, 512-byte/1024-byte data SRAM, and a 32MHz clock input. PIC16F180x microcontrollers also feature an operating voltage range of 1.8V - 5.5V, a minimum instruction time of 125ns and an operating temperature range of -40°C - +125°C.
The PIC16F18054/55/7
Microchip Launches New CXL for Data Center Computing ™ Intelligent storage controller helps modern CPU optimize application workload
Microchip Launches New CXL for Data Center Computing ™ Intelligent storage controller helps modern CPU optimize application workload
Source: Contributed by the manufacturer • Author: Microchip • 2022-08-08 10:45 • 294 reads • 0 comments
SMC 2000 series can provide DDR storage bandwidth and capacity expansion, reliability and media flexibility for the next generation CPU and SoC to improve artificial intelligence and machine learning performance
Limited by the increase of storage channels for
