Microsemi Corporation JANTX2N3251AUB
- JANTX2N3251AUB
- Microsemi Corporation
- TRANS PNP 60V 0.2A TO-39
- Transistors - Bipolar (BJT) - Single
- JANTX2N3251AUB Лист данных
- 3-SMD, No Lead
- Bulk
- Lead free / RoHS Compliant
- 3498
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number JANTX2N3251AUB |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Microsemi Corporation |
Description TRANS PNP 60V 0.2A TO-39 |
Package Bulk |
Series Military, MIL-PRF-19500/323 |
Operating Temperature -65°C ~ 200°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-SMD, No Lead |
Supplier Device Package UB |
Power - Max 360 mW |
Transistor Type PNP |
Current - Collector (Ic) (Max) 200 mA |
Voltage - Collector Emitter Breakdown (Max) 60 V |
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V |
Frequency - Transition - |
Package_case 3-SMD, No Lead |
JANTX2N3251AUB Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о JANTX2N3251AUB ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
JAN2N3251A
TRANS PNP 60V 0.2A TO-39
JANTX2N2944A
TRANS PNP 60V 0.2A TO-39
JAN2N1489
TRANS PNP 60V 0.2A TO-39
JANTXV2N6251T1
TRANS PNP 60V 0.2A TO-39
JANTX2N6251T1
TRANS PNP 60V 0.2A TO-39
JANS2N6251T1
TRANS PNP 60V 0.2A TO-39
JAN2N6251T1
TRANS PNP 60V 0.2A TO-39
JANTXV2N6250T1
TRANS PNP 60V 0.2A TO-39
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.