Microsemi Corporation JANTX1N6623U
- JANTX1N6623U
- Microsemi Corporation
- DIODE GEN PURP 800V 1A A-MELF
- Diodes - Rectifiers - Single
- JANTX1N6623U Лист данных
- SQ-MELF, A
- Bulk
- Lead free / RoHS Compliant
- 1352
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number JANTX1N6623U |
Category Diodes - Rectifiers - Single |
Manufacturer Microsemi Corporation |
Description DIODE GEN PURP 800V 1A A-MELF |
Package Bulk |
Series Military, MIL-PRF-19500/585 |
Mounting Type Surface Mount |
Package / Case SQ-MELF, A |
Supplier Device Package D-5A |
Diode Type Standard |
Current - Average Rectified (Io) 1A |
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 1 A |
Current - Reverse Leakage @ Vr 500 nA @ 800 V |
Capacitance @ Vr, F - |
Voltage - DC Reverse (Vr) (Max) 800 V |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) 50 ns |
Operating Temperature - Junction -65°C ~ 150°C |
Package_case SQ-MELF, A |
JANTX1N6623U Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о JANTX1N6623U ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
JANTXV1N6622U
DIODE GEN PURP 600V 1.2A A-MELF
JAN1N6622U
DIODE GEN PURP 600V 1.2A A-MELF
JANTXV1N6621U
DIODE GEN PURP 600V 1.2A A-MELF
JANTXV1N6643US
DIODE GEN PURP 600V 1.2A A-MELF
JAN1N6631U
DIODE GEN PURP 600V 1.2A A-MELF
UTR4340
DIODE GEN PURP 600V 1.2A A-MELF
SM16Z4689 E3
DIODE GEN PURP 600V 1.2A A-MELF
SM16Z4689
DIODE GEN PURP 600V 1.2A A-MELF
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.