Microsemi Corporation JANTX1N4105-1
- JANTX1N4105-1
- Microsemi Corporation
- DIODE ZENER 11V 500MW DO35
- Diodes - Zener - Single
- JANTX1N4105-1 Лист данных
- DO-204AH, DO-35, Axial
- DO-204AH, DO-35, Axial
- Lead free / RoHS Compliant
- 1592
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number JANTX1N4105-1 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 11V 500MW DO35 |
Package DO-204AH, DO-35, Axial |
Series Military, MIL-PRF-19500/435 |
Operating Temperature -65°C ~ 175°C |
Mounting Type Through Hole |
Package / Case DO-204AH, DO-35, Axial |
Supplier Device Package DO-35 |
Tolerance ±5% |
Power - Max 500mW |
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA |
Current - Reverse Leakage @ Vr 50nA @ 8.5V |
Voltage - Zener (Nom) (Vz) 11V |
Impedance (Max) (Zzt) 200 Ohms |
Package_case DO-204AH, DO-35, Axial |
JANTX1N4105-1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о JANTX1N4105-1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
JANTX1N825-1
DIODE ZENER 5.9V 500MW DO35
1N4465
DIODE ZENER 5.9V 500MW DO35
1N4971
DIODE ZENER 5.9V 500MW DO35
1N4370A
DIODE ZENER 5.9V 500MW DO35
JANTX1N6326
DIODE ZENER 5.9V 500MW DO35
1N4970US
DIODE ZENER 5.9V 500MW DO35
1N4954US
DIODE ZENER 5.9V 500MW DO35
1N4972
DIODE ZENER 5.9V 500MW DO35
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp