IXZR16N60

IXYS-RF IXZR16N60

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXZR16N60
  • IXYS-RF
  • RF MOSFET N-CHANNEL PLUS247-3
  • Transistors - FETs, MOSFETs - RF
  • IXZR16N60 Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXZR16N60Lead free / RoHS Compliant
  • 16418
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXZR16N60
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
IXYS-RF
Description
RF MOSFET N-CHANNEL PLUS247-3
Package
Tube
Series
Z-MOS™
Package / Case
TO-247-3
Supplier Device Package
PLUS247™-3
Frequency
65MHz
Gain
23dB
Noise Figure
-
Power - Output
350W
Transistor Type
N-Channel
Voltage - Test
-
Current - Test
-
Voltage - Rated
600 V
Current Rating (Amps)
18A
Package_case
TO-247-3

IXZR16N60 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXZR16N60

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXZR16N60

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXZR16N60

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXZR16N60 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS-RF

475-102N20A-00,https://www.jinftry.ru/product_detail/IXZR16N60
475-102N20A-00

RF MOSFET N-CHANNEL DE475

IXZR08N120A-00,https://www.jinftry.ru/product_detail/IXZR16N60
IXZR08N120A-00

RF MOSFET N-CHANNEL DE475

IXZR08N120B-00,https://www.jinftry.ru/product_detail/IXZR16N60
IXZR08N120B-00

RF MOSFET N-CHANNEL DE475

IXZ316N60,https://www.jinftry.ru/product_detail/IXZR16N60
IXZ316N60

RF MOSFET N-CHANNEL DE475

IXZ308N120,https://www.jinftry.ru/product_detail/IXZR16N60
IXZ308N120

RF MOSFET N-CHANNEL DE475

375-102N15A-00,https://www.jinftry.ru/product_detail/IXZR16N60
375-102N15A-00

RF MOSFET N-CHANNEL DE475

275-501N16A-00,https://www.jinftry.ru/product_detail/IXZR16N60
275-501N16A-00

RF MOSFET N-CHANNEL DE475

IXZR18N50B-00,https://www.jinftry.ru/product_detail/IXZR16N60
IXZR18N50B-00

RF MOSFET N-CHANNEL DE475

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP