IXYH55N120A4

IXYS IXYH55N120A4

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXYH55N120A4
  • IXYS
  • IGBT GENX4 1200V 55A TO247
  • Transistors - IGBTs - Single
  • IXYH55N120A4 Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXYH55N120A4Lead free / RoHS Compliant
  • 27760
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXYH55N120A4
Category
Transistors - IGBTs - Single
Manufacturer
IXYS
Description
IGBT GENX4 1200V 55A TO247
Package
Tube
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Power - Max
650 W
Input Type
Standard
Reverse Recovery Time (trr)
35 ns
Current - Collector (Ic) (Max)
175 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
IGBT Type
PT
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 55A
Gate Charge
110 nC
Td (on/off) @ 25°C
23ns/300ns
Test Condition
600V, 40A, 5Ohm, 15V
Current - Collector Pulsed (Icm)
350 A
Switching Energy
2.3mJ (on), 5.3mJ (off)
Package_case
TO-247-3

IXYH55N120A4 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXYH55N120A4

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXYH55N120A4

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXYH55N120A4

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXYH55N120A4 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXYT85N120A4HV,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXYT85N120A4HV

IGBT GENX4 1200V 85A TO268HV

IXYH85N120A4,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXYH85N120A4

IGBT GENX4 1200V 85A TO268HV

IXYK110N120A4,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXYK110N120A4

IGBT GENX4 1200V 85A TO268HV

IXYX110N120A4,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXYX110N120A4

IGBT GENX4 1200V 85A TO268HV

IXYK140N120A4,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXYK140N120A4

IGBT GENX4 1200V 85A TO268HV

IXBT14N300HV,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXBT14N300HV

IGBT GENX4 1200V 85A TO268HV

IXBK64N250,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXBK64N250

IGBT GENX4 1200V 85A TO268HV

IXBA16N170AHV,https://www.jinftry.ru/product_detail/IXYH55N120A4
IXBA16N170AHV

IGBT GENX4 1200V 85A TO268HV

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP