IXYH40N65C3

IXYS IXYH40N65C3

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXYH40N65C3
  • IXYS
  • IGBT 650V 80A 300W TO247
  • Transistors - IGBTs - Single
  • IXYH40N65C3 Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXYH40N65C3Lead free / RoHS Compliant
  • 15173
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXYH40N65C3
Category
Transistors - IGBTs - Single
Manufacturer
IXYS
Description
IGBT 650V 80A 300W TO247
Package
Tube
Series
GenX3™, XPT™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Power - Max
300 W
Input Type
Standard
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
80 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
PT
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 40A
Gate Charge
70 nC
Td (on/off) @ 25°C
26ns/106ns
Test Condition
400V, 30A, 10Ohm, 15V
Current - Collector Pulsed (Icm)
180 A
Switching Energy
860µJ (on), 400µJ (off)
Package_case
TO-247-3

IXYH40N65C3 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXYH40N65C3

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXYH40N65C3

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXYH40N65C3

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXYH40N65C3 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGQ96N30TBD1,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGQ96N30TBD1

IGBT 320V 96A TO3P

IXGQ120N30TCD1,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGQ120N30TCD1

IGBT 320V 96A TO3P

IXGP15N100C,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGP15N100C

IGBT 320V 96A TO3P

IXGP20N120,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGP20N120

IGBT 320V 96A TO3P

IXGQ28N120BD1,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGQ28N120BD1

IGBT 320V 96A TO3P

IXGH32N90B2D1,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGH32N90B2D1

IGBT 320V 96A TO3P

IXGT32N90B2,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXGT32N90B2

IGBT 320V 96A TO3P

IXYH24N90C3,https://www.jinftry.ru/product_detail/IXYH40N65C3
IXYH24N90C3

IGBT 320V 96A TO3P

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP