IXYA30N120A3HV

IXYS IXYA30N120A3HV

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXYA30N120A3HV
  • IXYS
  • IGBT DISCRETE TO-263HV
  • Transistors - IGBTs - Single
  • IXYA30N120A3HV Лист данных
  • -
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXYA30N120A3HVLead free / RoHS Compliant
  • 29560
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXYA30N120A3HV
Category
Transistors - IGBTs - Single
Manufacturer
IXYS
Description
IGBT DISCRETE TO-263HV
Package
Tube
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Power - Max
-
Input Type
-
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
-
Gate Charge
-
Td (on/off) @ 25°C
-
Test Condition
-
Current - Collector Pulsed (Icm)
-
Switching Energy
-
Package_case
-

IXYA30N120A3HV Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXYA30N120A3HV

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXYA30N120A3HV

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXYA30N120A3HV

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXYA30N120A3HV ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXYH120N65B3,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXYH120N65B3

DISC IGBT XPT-GENX3 TO-247AD

IXG100IF1200HF,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXG100IF1200HF

DISC IGBT XPT-GENX3 TO-247AD

IXBT42N170-TRL,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXBT42N170-TRL

DISC IGBT XPT-GENX3 TO-247AD

IXYR100N65A3V1,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXYR100N65A3V1

DISC IGBT XPT-GENX3 TO-247AD

IXG70IF1200NA,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXG70IF1200NA

DISC IGBT XPT-GENX3 TO-247AD

IXYH8N250CHV,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXYH8N250CHV

DISC IGBT XPT-GENX3 TO-247AD

IXXT100N75B4HV,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXXT100N75B4HV

DISC IGBT XPT-GENX3 TO-247AD

IXA70R1200NA,https://www.jinftry.ru/product_detail/IXYA30N120A3HV
IXA70R1200NA

DISC IGBT XPT-GENX3 TO-247AD

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP