IXXH100N60C3

IXYS IXXH100N60C3

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXXH100N60C3
  • IXYS
  • IGBT 600V 190A 830W TO247AD
  • Transistors - IGBTs - Single
  • IXXH100N60C3 Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXXH100N60C3Lead free / RoHS Compliant
  • 1135
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXXH100N60C3
Category
Transistors - IGBTs - Single
Manufacturer
IXYS
Description
IGBT 600V 190A 830W TO247AD
Package
Tube
Series
GenX3™, XPT™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXXH)
Power - Max
830 W
Input Type
Standard
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
190 A
Voltage - Collector Emitter Breakdown (Max)
600 V
IGBT Type
PT
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 70A
Gate Charge
150 nC
Td (on/off) @ 25°C
30ns/90ns
Test Condition
360V, 70A, 2Ohm, 15V
Current - Collector Pulsed (Icm)
380 A
Switching Energy
2mJ (on), 950µJ (off)
Package_case
TO-247-3

IXXH100N60C3 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXXH100N60C3

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXXH100N60C3

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXXH100N60C3

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXXH100N60C3 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGR72N60C3D1,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGR72N60C3D1

IGBT 600V 75A 200W ISOPLUS247

IXGK72N60C3H1,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGK72N60C3H1

IGBT 600V 75A 200W ISOPLUS247

IXGK72N60A3H1,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGK72N60A3H1

IGBT 600V 75A 200W ISOPLUS247

IXGT30N120BD1,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGT30N120BD1

IGBT 600V 75A 200W ISOPLUS247

IXGX72N60B3H1,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGX72N60B3H1

IGBT 600V 75A 200W ISOPLUS247

IXGT25N160,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGT25N160

IGBT 600V 75A 200W ISOPLUS247

IXGX72N60C3H1,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGX72N60C3H1

IGBT 600V 75A 200W ISOPLUS247

IXGH30N120BD1,https://www.jinftry.ru/product_detail/IXXH100N60C3
IXGH30N120BD1

IGBT 600V 75A 200W ISOPLUS247

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP