IXXA50N60B3

IXYS IXXA50N60B3

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXXA50N60B3
  • IXYS
  • IGBT
  • Transistors - IGBTs - Single
  • IXXA50N60B3 Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXXA50N60B3Lead free / RoHS Compliant
  • 774
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXXA50N60B3
Category
Transistors - IGBTs - Single
Manufacturer
IXYS
Description
IGBT
Package
Tube
Series
XPT™, GenX3™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AA
Power - Max
600 W
Input Type
Standard
Reverse Recovery Time (trr)
40 ns
Current - Collector (Ic) (Max)
120 A
Voltage - Collector Emitter Breakdown (Max)
600 V
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 36A
Gate Charge
70 nC
Td (on/off) @ 25°C
27ns/150ns
Test Condition
360V, 36A, 5Ohm, 15V
Current - Collector Pulsed (Icm)
200 A
Switching Energy
670µJ (on), 1.2mJ (off)
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXXA50N60B3 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXXA50N60B3

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXXA50N60B3

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXXA50N60B3

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXXA50N60B3 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXYQ40N65B3D1,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXYQ40N65B3D1

DISC IGBT XPT-GENX3 TO-3P (3)

IXYH30N120C4,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXYH30N120C4

DISC IGBT XPT-GENX3 TO-3P (3)

IXYH30N120A4,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXYH30N120A4

DISC IGBT XPT-GENX3 TO-3P (3)

IXYH30N120B4,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXYH30N120B4

DISC IGBT XPT-GENX3 TO-3P (3)

IXGT72N60A3-TRL,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXGT72N60A3-TRL

DISC IGBT XPT-GENX3 TO-3P (3)

IXYP15N65B3D1,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXYP15N65B3D1

DISC IGBT XPT-GENX3 TO-3P (3)

IXA20RG1200DHG-TRR,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXA20RG1200DHG-TRR

DISC IGBT XPT-GENX3 TO-3P (3)

IXYH40N120A4,https://www.jinftry.ru/product_detail/IXXA50N60B3
IXYH40N120A4

DISC IGBT XPT-GENX3 TO-3P (3)

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP