IXTX22N100L

IXYS IXTX22N100L

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTX22N100L
  • IXYS
  • MOSFET N-CH 1000V 22A PLUS247-3
  • Transistors - FETs, MOSFETs - Single
  • IXTX22N100L Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTX22N100LLead free / RoHS Compliant
  • 1987
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTX22N100L
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 22A PLUS247-3
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PLUS247™-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
700W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 11A, 20V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
7050 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

IXTX22N100L Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTX22N100L

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTX22N100L

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTX22N100L

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTX22N100L ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTX22N100L
IXTK20N150,https://www.jinftry.ru/product_detail/IXTX22N100L
IXTK20N150

MOSFET N-CH 1500V 20A TO264

IXFN20N120P,https://www.jinftry.ru/product_detail/IXTX22N100L
IXFN20N120P

MOSFET N-CH 1500V 20A TO264

IXFN38N80Q2,https://www.jinftry.ru/product_detail/IXTX22N100L
IXFN38N80Q2

MOSFET N-CH 1500V 20A TO264

MMIX1F230N20T,https://www.jinftry.ru/product_detail/IXTX22N100L
MMIX1F230N20T

MOSFET N-CH 1500V 20A TO264

MMIX1F180N25T,https://www.jinftry.ru/product_detail/IXTX22N100L
MMIX1F180N25T

MOSFET N-CH 1500V 20A TO264

MMIX1F160N30T,https://www.jinftry.ru/product_detail/IXTX22N100L
MMIX1F160N30T

MOSFET N-CH 1500V 20A TO264

IXFE23N100,https://www.jinftry.ru/product_detail/IXTX22N100L
IXFE23N100

MOSFET N-CH 1500V 20A TO264

IXFL30N120P,https://www.jinftry.ru/product_detail/IXTX22N100L
IXFL30N120P

MOSFET N-CH 1500V 20A TO264

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP