IXYS IXTU2N80P
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTU2N80P
- IXYS
- MOSFET N-CH 800V 2A TO251
- Transistors - FETs, MOSFETs - Single
- IXTU2N80P Лист данных
- TO-251-3 Short Leads, IPak, TO-251AA
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 4586
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTU2N80P |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 800V 2A TO251 |
| Package Cut Tape (CT) |
| Series PolarHV™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package TO-251AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 70W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 800 V |
| Current - Continuous Drain (Id) @ 25°C 2A (Tc) |
| Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id 5.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-251-3 Short Leads, IPak, TO-251AA |
IXTU2N80P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTU2N80P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTU2N80P сопутствующие товары
Комментарии
IXYS
IXTA6N50P
MOSFET N-CH 500V 6A TO263
IXTY3N60P
MOSFET N-CH 500V 6A TO263
IXTA4N80P
MOSFET N-CH 500V 6A TO263
IXTP3N60P
MOSFET N-CH 500V 6A TO263
IXTP5N50P
MOSFET N-CH 500V 6A TO263
IXFP5N50PM
MOSFET N-CH 500V 6A TO263
IXTP5N60P
MOSFET N-CH 500V 6A TO263
IXTY24N15T
MOSFET N-CH 500V 6A TO263
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
