IXTT6N120

IXYS IXTT6N120

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTT6N120
  • IXYS
  • MOSFET N-CH 1200V 6A TO268
  • Transistors - FETs, MOSFETs - Single
  • IXTT6N120 Лист данных
  • TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTT6N120Lead free / RoHS Compliant
  • 10275
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTT6N120
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 6A TO268
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package
TO-268AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
2.6Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXTT6N120 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTT6N120

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTT6N120

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTT6N120

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTT6N120 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTT6N120
IXTK88N30P,https://www.jinftry.ru/product_detail/IXTT6N120
IXTK88N30P

MOSFET N-CH 300V 88A TO264

IXTK150N15P,https://www.jinftry.ru/product_detail/IXTT6N120
IXTK150N15P

MOSFET N-CH 300V 88A TO264

IXTK120N20P,https://www.jinftry.ru/product_detail/IXTT6N120
IXTK120N20P

MOSFET N-CH 300V 88A TO264

IXTK100N25P,https://www.jinftry.ru/product_detail/IXTT6N120
IXTK100N25P

MOSFET N-CH 300V 88A TO264

IXTH6N90A,https://www.jinftry.ru/product_detail/IXTT6N120
IXTH6N90A

MOSFET N-CH 300V 88A TO264

IXFT70N15,https://www.jinftry.ru/product_detail/IXTT6N120
IXFT70N15

MOSFET N-CH 300V 88A TO264

IXFT88N28P,https://www.jinftry.ru/product_detail/IXTT6N120
IXFT88N28P

MOSFET N-CH 300V 88A TO264

IXFT50N60X,https://www.jinftry.ru/product_detail/IXTT6N120
IXFT50N60X

MOSFET N-CH 300V 88A TO264

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP