IXTT64N25P

IXYS IXTT64N25P

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTT64N25P
  • IXYS
  • MOSFET N-CH 250V 64A TO268
  • Transistors - FETs, MOSFETs - Single
  • IXTT64N25P Лист данных
  • TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTT64N25PLead free / RoHS Compliant
  • 2888
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTT64N25P
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 250V 64A TO268
Package
Bulk
Series
PolarHT™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package
TO-268AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
400W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Rds On (Max) @ Id, Vgs
49mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3450 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXTT64N25P Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTT64N25P

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTT64N25P

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTT64N25P

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTT64N25P ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTT64N25P
IXTA3N110,https://www.jinftry.ru/product_detail/IXTT64N25P
IXTA3N110

MOSFET N-CH 1100V 3A TO263

IXTA32P20T,https://www.jinftry.ru/product_detail/IXTT64N25P
IXTA32P20T

MOSFET N-CH 1100V 3A TO263

IXFH230N075T2,https://www.jinftry.ru/product_detail/IXTT64N25P
IXFH230N075T2

MOSFET N-CH 1100V 3A TO263

IXKH24N60C5,https://www.jinftry.ru/product_detail/IXTT64N25P
IXKH24N60C5

MOSFET N-CH 1100V 3A TO263

IXFH22N60P,https://www.jinftry.ru/product_detail/IXTT64N25P
IXFH22N60P

MOSFET N-CH 1100V 3A TO263

IXTP32P20T,https://www.jinftry.ru/product_detail/IXTT64N25P
IXTP32P20T

MOSFET N-CH 1100V 3A TO263

IXTH260N055T2,https://www.jinftry.ru/product_detail/IXTT64N25P
IXTH260N055T2

MOSFET N-CH 1100V 3A TO263

IXTH120P065T,https://www.jinftry.ru/product_detail/IXTT64N25P
IXTH120P065T

MOSFET N-CH 1100V 3A TO263

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP