IXYS IXTT16P60P
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTT16P60P
- IXYS
- MOSFET P-CH 600V 16A TO268
- Transistors - FETs, MOSFETs - Single
- IXTT16P60P Лист данных
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
-
Lead free / RoHS Compliant - 16162
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTT16P60P |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET P-CH 600V 16A TO268 |
| Package Tube |
| Series PolarP™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package TO-268AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 460W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 16A (Tc) |
| Rds On (Max) @ Id, Vgs 720mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXTT16P60P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTT16P60P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTT16P60P сопутствующие товары
Комментарии
IXYS
IXTL2N450
MOSFET N-CH 4500V 2A I5PAK
IXTK5N250
MOSFET N-CH 4500V 2A I5PAK
IXFN36N100
MOSFET N-CH 4500V 2A I5PAK
IXTP50N25T
MOSFET N-CH 4500V 2A I5PAK
IXFN80N50
MOSFET N-CH 4500V 2A I5PAK
IXTR170P10P
MOSFET N-CH 4500V 2A I5PAK
IXTT40N50L2
MOSFET N-CH 4500V 2A I5PAK
IXFH80N65X2
MOSFET N-CH 4500V 2A I5PAK
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
