IXYS IXTP80N10T
- IXTP80N10T
- IXYS
- MOSFET N-CH 100V 80A TO220AB
- Transistors - FETs, MOSFETs - Single
- IXTP80N10T Лист данных
- TO-220-3
- Bulk
- Lead free / RoHS Compliant
- 4888
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTP80N10T |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 100V 80A TO220AB |
Package Bulk |
Series TrenchMV™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 230W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3040 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
IXTP80N10T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTP80N10T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXTY08N100D2
MOSFET N-CH 1000V 800MA TO252
VMO1600-02P
MOSFET N-CH 1000V 800MA TO252
IXUC200N055
MOSFET N-CH 1000V 800MA TO252
IXUC100N055
MOSFET N-CH 1000V 800MA TO252
IXTY06N120P
MOSFET N-CH 1000V 800MA TO252
IXFX260N17T
MOSFET N-CH 1000V 800MA TO252
IXFK260N17T
MOSFET N-CH 1000V 800MA TO252
IXFN260N17T
MOSFET N-CH 1000V 800MA TO252
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.