IXYS IXTP2R4N50P
- IXTP2R4N50P
- IXYS
- MOSFET N-CH 500V 2.4A TO220AB
- Transistors - FETs, MOSFETs - Single
- IXTP2R4N50P Лист данных
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 1494
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTP2R4N50P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 500V 2.4A TO220AB |
Package Tube |
Series PolarHV™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 55W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 500 V |
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) |
Rds On (Max) @ Id, Vgs 3.75Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id 5.5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
IXTP2R4N50P Гарантии
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• Гарантированное качество
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Picture 01
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Maximum working temperature: 150°C
Maximum storage temperature: 175°C
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