IXYS IXTM35N30
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- IXTM35N30
- IXYS
- MOSFET N-CH 300V 35A TO204AE
- Transistors - FETs, MOSFETs - Single
- IXTM35N30 Лист данных
- TO-204AE
- Tube
-
Lead free / RoHS Compliant - 4934
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IXTM35N30 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 300V 35A TO204AE |
| Package Tube |
| Series GigaMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-204AE |
| Supplier Device Package TO-204AE |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 300W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 300 V |
| Current - Continuous Drain (Id) @ 25°C 35A (Tc) |
| Rds On (Max) @ Id, Vgs 100mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-204AE |
IXTM35N30 Гарантии
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