IXYS IXTK32P60P
- IXTK32P60P
- IXYS
- MOSFET P-CH 600V 32A TO264
- Transistors - FETs, MOSFETs - Single
- IXTK32P60P Лист данных
- TO-264-3, TO-264AA
- Tube
- Lead free / RoHS Compliant
- 3727
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTK32P60P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET P-CH 600V 32A TO264 |
Package Tube |
Series PolarP™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-264-3, TO-264AA |
Supplier Device Package TO-264 (IXTK) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 890W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 32A (Tc) |
Rds On (Max) @ Id, Vgs 350mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-264-3, TO-264AA |
IXTK32P60P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTK32P60P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXFK30N50Q
MOSFET N-CH 500V 30A TO264AA
FDM21-05QC
MOSFET N-CH 500V 30A TO264AA
IXFX240N15T2
MOSFET N-CH 500V 30A TO264AA
IXTX170P10P
MOSFET N-CH 500V 30A TO264AA
IXFR90N20
MOSFET N-CH 500V 30A TO264AA
IXFT12N90Q
MOSFET N-CH 500V 30A TO264AA
IXFH80N20Q
MOSFET N-CH 500V 30A TO264AA
IXFK16N90Q
MOSFET N-CH 500V 30A TO264AA
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4