IXYS IXTK250N10
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTK250N10
- IXYS
- MOSFET N-CH 100V 250A TO264
- Transistors - FETs, MOSFETs - Single
- IXTK250N10 Лист данных
- TO-264-3, TO-264AA
- Bulk
-
Lead free / RoHS Compliant - 2467
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTK250N10 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 100V 250A TO264 |
| Package Bulk |
| Series MegaMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-264-3, TO-264AA |
| Supplier Device Package TO-264 (IXTK) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 730W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 250A (Tc) |
| Rds On (Max) @ Id, Vgs 5mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 430 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 12700 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-264-3, TO-264AA |
IXTK250N10 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTK250N10 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTK250N10 сопутствующие товары
Комментарии
IXYS
IXTH280N055T
MOSFET N-CH 55V 280A TO247
IXTH250N075T
MOSFET N-CH 55V 280A TO247
IXTH240N055T
MOSFET N-CH 55V 280A TO247
IXTH230N085T
MOSFET N-CH 55V 280A TO247
IXTH220N075T
MOSFET N-CH 55V 280A TO247
IXTH220N055T
MOSFET N-CH 55V 280A TO247
IXTH200N085T
MOSFET N-CH 55V 280A TO247
VMO40-05P1
MOSFET N-CH 55V 280A TO247
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
