IXYS IXTH48N15
- IXTH48N15
- IXYS
- MOSFET N-CH 150V 48A TO247
- Transistors - FETs, MOSFETs - Single
- IXTH48N15 Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 2503
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTH48N15 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 150V 48A TO247 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 (IXTH) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 180W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 150 V |
Current - Continuous Drain (Id) @ 25°C 48A (Tc) |
Rds On (Max) @ Id, Vgs 32mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
IXTH48N15 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTH48N15 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXFT24N50
MOSFET N-CH 500V 24A TO268
IXTH10N100D2
MOSFET N-CH 500V 24A TO268
IXFT400N075T2
MOSFET N-CH 500V 24A TO268
IXTH10P50
MOSFET N-CH 500V 24A TO268
IXTH30N25
MOSFET N-CH 500V 24A TO268
IXFH12N120P
MOSFET N-CH 500V 24A TO268
IXFK88N30P
MOSFET N-CH 500V 24A TO268
IXFH11N80
MOSFET N-CH 500V 24A TO268
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.