IXTH40N50L2

IXYS IXTH40N50L2

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTH40N50L2
  • IXYS
  • MOSFET N-CH 500V 40A TO247
  • Transistors - FETs, MOSFETs - Single
  • IXTH40N50L2 Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTH40N50L2Lead free / RoHS Compliant
  • 1026
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTH40N50L2
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 500V 40A TO247
Package
Tube
Series
Linear L2™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
540W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Rds On (Max) @ Id, Vgs
170mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
10400 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

IXTH40N50L2 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTH40N50L2

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTH40N50L2

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTH40N50L2

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTH40N50L2 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXFX90N20Q,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXFX90N20Q

MOSFET N-CH 200V 90A PLUS247-3

IXFT52N30Q,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXFT52N30Q

MOSFET N-CH 200V 90A PLUS247-3

MKE11R600DCGFC,https://www.jinftry.ru/product_detail/IXTH40N50L2
MKE11R600DCGFC

MOSFET N-CH 200V 90A PLUS247-3

IXFH13N100,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXFH13N100

MOSFET N-CH 200V 90A PLUS247-3

IXFT16N120P,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXFT16N120P

MOSFET N-CH 200V 90A PLUS247-3

IXKC25N80C,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXKC25N80C

MOSFET N-CH 200V 90A PLUS247-3

IXTR140P10T,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXTR140P10T

MOSFET N-CH 200V 90A PLUS247-3

IXFK33N50,https://www.jinftry.ru/product_detail/IXTH40N50L2
IXFK33N50

MOSFET N-CH 200V 90A PLUS247-3

What is a bipolar transistor and what is its operating mode

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP