IXTH2R4N120P

IXYS IXTH2R4N120P

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  • IXTH2R4N120P
  • IXYS
  • MOSFET N-CH 1200V 2.4A TO247
  • Transistors - FETs, MOSFETs - Single
  • IXTH2R4N120P Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTH2R4N120PLead free / RoHS Compliant
  • 3947
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTH2R4N120P
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 2.4A TO247
Package
Tube
Series
Polar™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1207 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

IXTH2R4N120P Гарантии

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