IXYS IXTH130N15T
- IXTH130N15T
- IXYS
- MOSFET N-CH 150V 130A TO247
- Transistors - FETs, MOSFETs - Single
- IXTH130N15T Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 6209
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTH130N15T |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 150V 130A TO247 |
Package Tube |
Series TrenchHV™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 (IXTH) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 750W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 150 V |
Current - Continuous Drain (Id) @ 25°C 130A (Tc) |
Rds On (Max) @ Id, Vgs 12mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 9800 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
IXTH130N15T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTH130N15T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXTH102N20T
MOSFET N-CH 200V 102A TO247
IXKC15N60C5
MOSFET N-CH 200V 102A TO247
IXFH96N15P
MOSFET N-CH 200V 102A TO247
IXFH52N30P
MOSFET N-CH 200V 102A TO247
IXFH110N10P
MOSFET N-CH 200V 102A TO247
IXTH52P10P
MOSFET N-CH 200V 102A TO247
IXTQ72N30T
MOSFET N-CH 200V 102A TO247
IXTQ130N15T
MOSFET N-CH 200V 102A TO247
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic