IXTH120N15T

IXYS IXTH120N15T

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTH120N15T
  • IXYS
  • MOSFET N-CH 150V 120A TO247
  • Transistors - FETs, MOSFETs - Single
  • IXTH120N15T Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTH120N15TLead free / RoHS Compliant
  • 14899
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTH120N15T
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 150V 120A TO247
Package
Tube
Series
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-247-3

IXTH120N15T Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTH120N15T

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTH120N15T

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTH120N15T

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTH120N15T ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTH120N15T
IXFP3N80,https://www.jinftry.ru/product_detail/IXTH120N15T
IXFP3N80

MOSFET N-CH 800V 3.6A TO220AB

IXFP30N60X,https://www.jinftry.ru/product_detail/IXTH120N15T
IXFP30N60X

MOSFET N-CH 800V 3.6A TO220AB

IXTA2R4N120P,https://www.jinftry.ru/product_detail/IXTH120N15T
IXTA2R4N120P

MOSFET N-CH 800V 3.6A TO220AB

IXTQ96N15P,https://www.jinftry.ru/product_detail/IXTH120N15T
IXTQ96N15P

MOSFET N-CH 800V 3.6A TO220AB

IXTQ74N20P,https://www.jinftry.ru/product_detail/IXTH120N15T
IXTQ74N20P

MOSFET N-CH 800V 3.6A TO220AB

IXTQ64N25P,https://www.jinftry.ru/product_detail/IXTH120N15T
IXTQ64N25P

MOSFET N-CH 800V 3.6A TO220AB

IXFQ24N60X,https://www.jinftry.ru/product_detail/IXTH120N15T
IXFQ24N60X

MOSFET N-CH 800V 3.6A TO220AB

IXKH20N60C5,https://www.jinftry.ru/product_detail/IXTH120N15T
IXKH20N60C5

MOSFET N-CH 800V 3.6A TO220AB

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic

The latest 2N3055 transistor datasheet, application, and price analysis in 2023

2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP