IXTF200N10T

IXYS IXTF200N10T

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  • IXTF200N10T
  • IXYS
  • MOSFET N-CH 100V 90A I4PAC
  • Transistors - FETs, MOSFETs - Single
  • IXTF200N10T Лист данных
  • i4-Pac™-5
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTF200N10TLead free / RoHS Compliant
  • 21043
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTF200N10T
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 100V 90A I4PAC
Package
Tube
Series
TrenchMV™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
i4-Pac™-5
Supplier Device Package
ISOPLUS i4-PAC™
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
156W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
i4-Pac™-5

IXTF200N10T Гарантии

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