IXYS IXTD1R4N60P 11
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- IXTD1R4N60P 11
- IXYS
- MOSFET N-CH 600V 1.4A DIE
- Transistors - FETs, MOSFETs - Single
- IXTD1R4N60P 11 Лист данных
- Die
- Bulk
-
Lead free / RoHS Compliant - 1239
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IXTD1R4N60P 11 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 600V 1.4A DIE |
| Package Bulk |
| Series PolarHV™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 50W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V |
| Vgs(th) (Max) @ Id 5.5V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case Die |
IXTD1R4N60P 11 Гарантии
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