IXTA6N100D2HV

IXYS IXTA6N100D2HV

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  • IXTA6N100D2HV
  • IXYS
  • MOSFET N-CH 1000V 6A TO263HV
  • Transistors - FETs, MOSFETs - Single
  • IXTA6N100D2HV Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTA6N100D2HVLead free / RoHS Compliant
  • 2985
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTA6N100D2HV
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 6A TO263HV
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263HV
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
FET Feature
Depletion Mode
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
6A (Tj)
Rds On (Max) @ Id, Vgs
2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
2650 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
0V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA6N100D2HV Гарантии

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