IXYS IXTA50N25T-TRL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTA50N25T-TRL
- IXYS
- MOSFET N-CH 250V 50A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA50N25T-TRL Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 2683
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTA50N25T-TRL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 250V 50A TO263 |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263 (D2Pak) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 400W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 250 V |
| Current - Continuous Drain (Id) @ 25°C 50A (Tc) |
| Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA50N25T-TRL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTA50N25T-TRL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTA50N25T-TRL сопутствующие товары
Комментарии
IXYS
IXFP22N65X2M
MOSFET N-CH 650V 22A TO220
IXTP20N65X2M
MOSFET N-CH 650V 22A TO220
IXTA200N055T2-7
MOSFET N-CH 650V 22A TO220
IXTQ60N10T
MOSFET N-CH 650V 22A TO220
IXFA5N100P-TRL
MOSFET N-CH 650V 22A TO220
IXFP18N65X2
MOSFET N-CH 650V 22A TO220
IXTA10P15T
MOSFET N-CH 650V 22A TO220
IXFA22N65X2-TRL
MOSFET N-CH 650V 22A TO220
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
