IXYS IXTA44N30T
- IXTA44N30T
- IXYS
- MOSFET N-CH 300V 44A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA44N30T Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant
- 16328
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTA44N30T |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 300V 44A TO263 |
Package Tube |
Series - |
Operating Temperature - |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) - |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 300 V |
Current - Continuous Drain (Id) @ 25°C 44A (Tc) |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA44N30T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTA44N30T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
![IXYS,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/image/catalog/manufacturer/logos/IXYS.png)
![IXTP1R4N120P,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixtp1r4n120p.jpg)
IXTP1R4N120P
MOSFET N-CH 1200V 1.4A TO220AB
![IXTU06N120P,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixtu06n120p.jpg)
IXTU06N120P
MOSFET N-CH 1200V 1.4A TO220AB
![IXFP5N100P,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixfp5n100p.jpg)
IXFP5N100P
MOSFET N-CH 1200V 1.4A TO220AB
![IXTQ75N10P,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixtq75n10p.jpg)
IXTQ75N10P
MOSFET N-CH 1200V 1.4A TO220AB
![IXTQ62N15P,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixtq62n15p.jpg)
IXTQ62N15P
MOSFET N-CH 1200V 1.4A TO220AB
![IXTQ18N60P,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixtq18n60p.jpg)
IXTQ18N60P
MOSFET N-CH 1200V 1.4A TO220AB
![IXTQ72N20T,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixtq72n20t.jpg)
IXTQ72N20T
MOSFET N-CH 1200V 1.4A TO220AB
![IXTQ62N25T,https://www.jinftry.ru/product_detail/IXTA44N30T](https://www.jinftry.ru/media/discrete-semiconductor/ixys__ixtq62n25t.jpg)
IXTQ62N25T
MOSFET N-CH 1200V 1.4A TO220AB
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic