IXYS IXTA3N110-TRL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTA3N110-TRL
- IXYS
- MOSFET N-CH 1100V 3A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA3N110-TRL Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
-
Lead free / RoHS Compliant - 11723
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTA3N110-TRL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 1100V 3A TO263 |
| Package Bulk |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263 (D2Pak) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 150W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1100 V |
| Current - Continuous Drain (Id) @ 25°C 3A (Tc) |
| Rds On (Max) @ Id, Vgs 4Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA3N110-TRL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTA3N110-TRL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTA3N110-TRL сопутствующие товары
Комментарии
IXYS
IXFA22N60P3
MOSFET N-CH 600V 22A TO263AA
IXTP12N70X2
MOSFET N-CH 600V 22A TO263AA
IXTP12N70X2M
MOSFET N-CH 600V 22A TO263AA
IXFA44N25X3
MOSFET N-CH 600V 22A TO263AA
IXFA50N20X3
MOSFET N-CH 600V 22A TO263AA
IXFA7N100P-TRL
MOSFET N-CH 600V 22A TO263AA
IXTA230N075T2-TRL
MOSFET N-CH 600V 22A TO263AA
IXTA120P065T-TRL
MOSFET N-CH 600V 22A TO263AA
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
