IXYS IXTA36P15P
- IXTA36P15P
- IXYS
- MOSFET P-CH 150V 36A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA36P15P Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
- Lead free / RoHS Compliant
- 15591
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTA36P15P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET P-CH 150V 36A TO263 |
Package Tube |
Series PolarP™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 150 V |
Current - Continuous Drain (Id) @ 25°C 36A (Tc) |
Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA36P15P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTA36P15P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXTH6N100D2
MOSFET N-CH 1000V 6A TO247
IXFH76N07-11
MOSFET N-CH 1000V 6A TO247
IXFK44N50P
MOSFET N-CH 1000V 6A TO247
IXFT44N50P
MOSFET N-CH 1000V 6A TO247
IXTH50P10
MOSFET N-CH 1000V 6A TO247
IXFT36N50P
MOSFET N-CH 1000V 6A TO247
IXTP3N120
MOSFET N-CH 1000V 6A TO247
IXFB80N50Q2
MOSFET N-CH 1000V 6A TO247
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.