IXYS IXTA1R4N100P
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTA1R4N100P
- IXYS
- MOSFET N-CH 1000V 1.4A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA1R4N100P Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
-
Lead free / RoHS Compliant - 4124
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTA1R4N100P |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 1000V 1.4A TO263 |
| Package Bulk |
| Series Polar™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 63W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1000 V |
| Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA1R4N100P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTA1R4N100P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTA1R4N100P сопутствующие товары
Комментарии
IXYS
IXTP36N20T
MOSFET N-CH 200V 36A TO220AB
IXTP2N80
MOSFET N-CH 200V 36A TO220AB
IXFP8N50P3
MOSFET N-CH 200V 36A TO220AB
IXTP2N100P
MOSFET N-CH 200V 36A TO220AB
IXTY08N100P
MOSFET N-CH 200V 36A TO220AB
IXTY1N120P
MOSFET N-CH 200V 36A TO220AB
IXTU08N100P
MOSFET N-CH 200V 36A TO220AB
IXTP48P05T
MOSFET N-CH 200V 36A TO220AB
What is transistor?
What is transistor?
What types of transistors in the market?
Function and properties of a transistor
Working principle of transistor
Transistor vs IC amplify
What’s a transistor used for?
Trend of transistors
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
