IXYS IXTA1N200P3HV
- IXTA1N200P3HV
- IXYS
- MOSFET N-CH 2000V 1A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA1N200P3HV Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
- Lead free / RoHS Compliant
- 15320
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTA1N200P3HV |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 2000V 1A TO263 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 2000 V |
Current - Continuous Drain (Id) @ 25°C 1A (Tc) |
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA1N200P3HV Гарантии
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