IXYS IXTA15N50L2
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTA15N50L2
- IXYS
- MOSFET N-CH 500V 15A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA15N50L2 Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 904
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTA15N50L2 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 500V 15A TO263 |
| Package Tube |
| Series Linear L2™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 300W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 500 V |
| Current - Continuous Drain (Id) @ 25°C 15A (Tc) |
| Rds On (Max) @ Id, Vgs 480mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 123 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4080 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA15N50L2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTA15N50L2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTA15N50L2 сопутствующие товары
Комментарии
IXYS
IXFH30N50Q3
MOSFET N-CH 500V 30A TO247AD
IXFT50N50P3
MOSFET N-CH 500V 30A TO247AD
IXTA05N100HV
MOSFET N-CH 500V 30A TO247AD
IXFQ94N30P3
MOSFET N-CH 500V 30A TO247AD
IXFT60N50P3
MOSFET N-CH 500V 30A TO247AD
IXFH80N25X3
MOSFET N-CH 500V 30A TO247AD
IXFQ50N50P3
MOSFET N-CH 500V 30A TO247AD
IXFQ34N50P3
MOSFET N-CH 500V 30A TO247AD
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
