IXYS IXSX35N120BD1
- IXSX35N120BD1
- IXYS
- IGBT 1200V 70A 300W PLUS247
- Transistors - IGBTs - Single
- IXSX35N120BD1 Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 2144
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXSX35N120BD1 |
Category Transistors - IGBTs - Single |
Manufacturer IXYS |
Description IGBT 1200V 70A 300W PLUS247 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package PLUS247™-3 |
Power - Max 300 W |
Input Type Standard |
Reverse Recovery Time (trr) 40 ns |
Current - Collector (Ic) (Max) 70 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
IGBT Type PT |
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A |
Gate Charge 120 nC |
Td (on/off) @ 25°C 36ns/160ns |
Test Condition 960V, 35A, 5Ohm, 15V |
Current - Collector Pulsed (Icm) 140 A |
Switching Energy 5mJ (off) |
Package_case TO-247-3 |
IXSX35N120BD1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXSX35N120BD1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXST40N60B
IGBT 600V 75A 280W TO268
IXST35N120B
IGBT 600V 75A 280W TO268
IXST30N60CD1
IGBT 600V 75A 280W TO268
IXST30N60C
IGBT 600V 75A 280W TO268
IXST30N60BD1
IGBT 600V 75A 280W TO268
IXST24N60BD1
IGBT 600V 75A 280W TO268
IXST15N120BD1
IGBT 600V 75A 280W TO268
IXST15N120B
IGBT 600V 75A 280W TO268
What Are Transistors and How Do They Work?
What is the definition of transistors?
What is the structure of a transistor?
How does a transistor work?
Classifications of a transistor
What are the functions of transistors?
Amplification function principle
What are transistors used for?
Relevant data and statistics of transistors for reference
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences: