IXYS IXSN50N60BD2
- IXSN50N60BD2
- IXYS
- IGBT MOD 600V 75A 250W SOT227B
- Transistors - IGBTs - Modules
- IXSN50N60BD2 Лист данных
- SOT-227-4, miniBLOC
- Tube
- Lead free / RoHS Compliant
- 3228
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXSN50N60BD2 |
Category Transistors - IGBTs - Modules |
Manufacturer IXYS |
Description IGBT MOD 600V 75A 250W SOT227B |
Package Tube |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SOT-227-4, miniBLOC |
Supplier Device Package SOT-227B |
Power - Max 250 W |
Configuration Single |
Current - Collector (Ic) (Max) 75 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
Current - Collector Cutoff (Max) 350 µA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A |
Input Capacitance (Cies) @ Vce 3.85 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case SOT-227-4, miniBLOC |
IXSN50N60BD2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXSN50N60BD2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXSN35N100U1
IGBT MOD 1000V 38A 205W SOT227B
IXGN50N60B
IGBT MOD 1000V 38A 205W SOT227B
IXGN40N60CD1
IGBT MOD 1000V 38A 205W SOT227B
IXGN200N60A
IGBT MOD 1000V 38A 205W SOT227B
IXGN200N60
IGBT MOD 1000V 38A 205W SOT227B
IXGN100N120
IGBT MOD 1000V 38A 205W SOT227B
MUBW10-06A7
IGBT MOD 1000V 38A 205W SOT227B
IXGN120N60A3D1
IGBT MOD 1000V 38A 205W SOT227B
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4