IXYS IXGR60N60C2
- IXGR60N60C2
- IXYS
- IGBT 600V 75A 250W ISOPLUS247
- Transistors - IGBTs - Single
- IXGR60N60C2 Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 885
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXGR60N60C2 |
Category Transistors - IGBTs - Single |
Manufacturer IXYS |
Description IGBT 600V 75A 250W ISOPLUS247 |
Package Tube |
Series HiPerFAST™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package ISOPLUS247™ |
Power - Max 250 W |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) 75 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type PT |
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A |
Gate Charge 140 nC |
Td (on/off) @ 25°C 18ns/95ns |
Test Condition 400V, 50A, 2Ohm, 15V |
Current - Collector Pulsed (Icm) 300 A |
Switching Energy 490µJ (off) |
Package_case TO-247-3 |
IXGR60N60C2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXGR60N60C2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXGR60N60B2
IGBT 600V 75A 250W ISOPLUS247
IXGR50N60C2D1
IGBT 600V 75A 250W ISOPLUS247
IXGR50N60C2
IGBT 600V 75A 250W ISOPLUS247
IXGR50N60BD1
IGBT 600V 75A 250W ISOPLUS247
IXGR50N60B2D1
IGBT 600V 75A 250W ISOPLUS247
IXGR50N60B2
IGBT 600V 75A 250W ISOPLUS247
IXGR40N60CD1
IGBT 600V 75A 250W ISOPLUS247
IXGR40N60C2D1
IGBT 600V 75A 250W ISOPLUS247
What is diode?
What are diodes and their characteristics in electronics?
Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str