IXYS IXGQ200N30PB
- IXGQ200N30PB
- IXYS
- IGBT 300V 400A TO3P
- Transistors - IGBTs - Single
- IXGQ200N30PB Лист данных
- TO-3P-3, SC-65-3
- Tube
- Lead free / RoHS Compliant
- 16599
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXGQ200N30PB |
Category Transistors - IGBTs - Single |
Manufacturer IXYS |
Description IGBT 300V 400A TO3P |
Package Tube |
Series - |
Operating Temperature - |
Mounting Type Through Hole |
Package / Case TO-3P-3, SC-65-3 |
Supplier Device Package TO-3P |
Power - Max - |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) 400 A |
Voltage - Collector Emitter Breakdown (Max) 300 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic - |
Gate Charge - |
Td (on/off) @ 25°C - |
Test Condition - |
Current - Collector Pulsed (Icm) - |
Switching Energy - |
Package_case TO-3P-3, SC-65-3 |
IXGQ200N30PB Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXGQ200N30PB ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXGT72N60B3
IGBT 600V 75A 540W TO268
IXGT45N120
IGBT 600V 75A 540W TO268
IXGT72N60A3
IGBT 600V 75A 540W TO268
IXYT80N90C3
IGBT 600V 75A 540W TO268
IXGH24N120C3H1
IGBT 600V 75A 540W TO268
IXGT20N140C3H1
IGBT 600V 75A 540W TO268
IXA33IF1200HB
IGBT 600V 75A 540W TO268
IXGK50N90B2D1
IGBT 600V 75A 540W TO268
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.