IXYS IXGH28N60B
- IXGH28N60B
- IXYS
- IGBT 600V 40A 150W TO247AD
- Transistors - IGBTs - Single
- IXGH28N60B Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 2300
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXGH28N60B |
Category Transistors - IGBTs - Single |
Manufacturer IXYS |
Description IGBT 600V 40A 150W TO247AD |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247AD |
Power - Max 150 W |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) 40 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 28A |
Gate Charge 68 nC |
Td (on/off) @ 25°C 15ns/175ns |
Test Condition 480V, 28A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 80 A |
Switching Energy 2mJ (off) |
Package_case TO-247-3 |
IXGH28N60B Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXGH28N60B ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXGH25N100AU1
IGBT 1000V 50A 200W TO247AD
IXGH25N100
IGBT 1000V 50A 200W TO247AD
IXGH24N60CD1
IGBT 1000V 50A 200W TO247AD
IXGH24N60BU1
IGBT 1000V 50A 200W TO247AD
IXGH20N60BU1
IGBT 1000V 50A 200W TO247AD
IXGT20N60BD1
IGBT 1000V 50A 200W TO247AD
IXGT20N60B
IGBT 1000V 50A 200W TO247AD
IXGT15N120C
IGBT 1000V 50A 200W TO247AD
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4