IXYS IXFX200N10P
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- IXFX200N10P
- IXYS
- MOSFET N-CH 100V 200A PLUS247-3
- Transistors - FETs, MOSFETs - Single
- IXFX200N10P Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 4421
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IXFX200N10P |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 100V 200A PLUS247-3 |
| Package Tube |
| Series HiPerFET™, PolarP2™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package PLUS247™-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 830W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 200A (Tc) |
| Rds On (Max) @ Id, Vgs 7.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id 5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
IXFX200N10P Гарантии
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