IXYS IXFT80N15Q
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXFT80N15Q
- IXYS
- MOSFET N-CH 150V 80A TO268
- Transistors - FETs, MOSFETs - Single
- IXFT80N15Q Лист данных
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
-
Lead free / RoHS Compliant - 758
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXFT80N15Q |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 150V 80A TO268 |
| Package Tube |
| Series HiPerFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package TO-268AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 360W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 150 V |
| Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
| Rds On (Max) @ Id, Vgs 22.5mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id 4V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXFT80N15Q Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFT80N15Q ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXFT80N15Q сопутствующие товары
Комментарии
IXYS
IXFN48N55
MOSFET N-CH 550V 48A SOT-227B
IXFN48N50U3
MOSFET N-CH 550V 48A SOT-227B
IXFN48N50U2
MOSFET N-CH 550V 48A SOT-227B
IXFN44N50U3
MOSFET N-CH 550V 48A SOT-227B
IXFN44N50U2
MOSFET N-CH 550V 48A SOT-227B
IXFN100N10S3
MOSFET N-CH 550V 48A SOT-227B
IXFN100N10S2
MOSFET N-CH 550V 48A SOT-227B
IXFN100N10S1
MOSFET N-CH 550V 48A SOT-227B
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
