IXYS IXFT4N100Q
- IXFT4N100Q
- IXYS
- MOSFET N-CH 1000V 4A TO268
- Transistors - FETs, MOSFETs - Single
- IXFT4N100Q Лист данных
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
- Lead free / RoHS Compliant
- 26902
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFT4N100Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 1000V 4A TO268 |
Package Tube |
Series HiPerFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package TO-268AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 150W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1000 V |
Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id 5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXFT4N100Q Гарантии
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